Super Inductor IP

Overview

Presently, stacked metal baluns and inductors exist on many processes, but are limited in performance by the forced use of lower process metal with high resistances and capacitances. The RF performance of the CC-203IP is greatly enhanced, in terms of Q and frequency response, extending the capabilities of SoC designs using stacked layer techniques, pioneered by CurrentRF. These newly-pioneered on-chip layer stacking techniques reduce the physical x-y size of the CC-203 super inductor, aiding in Q enhancement and frequency response.

Key Features

  • High Inductor Q (10 to 50)
  • High Inductor Bandwidth (2.5Ghz to 50Ghz)
  • Stackable Design
  • Customizable Design

Benefits

  • High Bandwidth RF Amplifier Design
  • High Selectivity RF Filter Design
  • Tunable Inductor Design

Block Diagram

Super Inductor IP Block Diagram

Applications

  • RF Amplifiers
  • CC-201
  • CC-202
  • Analog Filters
  • RF Filters

Deliverables

  • Behavioral Model
  • Datasheet
  • .gds view
  • LEF view
  • 2 to 3 week custom spin time
  • Customizable Circuit Design
  • Design Support

Technical Specifications

Foundry, Node
any IC manufacturing process
Maturity
Silicon Proven
Availability
44197
Tower
Silicon Proven: 180nm , 180nm , 180nm
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Semiconductor IP