A TSMC 55nm LP Specialized 20V Analog I/O in Standard Low Voltage CMOS
This silicon-proven TSMC 55nm LP 20V ESD cell is a high-voltage electrostatic discharge (ESD) protection solution specifically engineered forlow-power and high-performance applications. This ESD cellis designed to safeguard high- voltage interfaces commonly found in analog, mixed-signal, RF, and power management ICs, where protection against electrostatic discharge events is critical for long-term reliability. By leveraging TSMCs 55nm Low Power (LP) process, this ESD solution ensures compatibility with high-voltage device architectures, making it ideal for automotive, industrial, and consumer electronics applications that demand both robust ESD resilience and minimal parasitic impact.
Optimized to withstand Human Body Model (HBM) and Charged Device Model (CDM) stress, this 20V ESD cell offers enhanced reliability in protecting sensitive I/O and power rails from transient voltage spikes. Its low-capacitance architec- ture is particularly beneficial for maintaining signal integrity, reducing the risk of performance degradation in high-speed communication interfaces, data converters, and mixed-signal circuits.
In addition to its high voltage handling capability, the ESD cell features a compact and layout-efficient design, allowing for optimized area utilization without compromising protection levels. This makes it easier to integrate within tight floorplan constraints, enabling cost-effective implementation while meeting stringent foundry ESD design rules. The solution is also scalable and customizable, offering flexibility for different pad structures, I/O configurations, and circuit topologies based on the unique requirements of the target IC application.
By providing a proven, silicon-validated ESD protection solution, the TSMC 55nm LP 20V ESD cell enables designers to achieve first-time-right silicon, reducing the risk of costly re-spins and ensuring compliance with industry-standard reliability specifications. Whether for display drivers, power management ICs, automotive ASICs, or industrial control chips, this ESD cell delivers the robust protection, design flexibility, and integration efficiency needed to support todays demanding semiconductor applications.
Library Overview
Feature | Specs | Comment |
Core | TSMC055LP | HPL (1.0V) & LP (1.05V) |
I/O Device | Any | Independent |
BEOL | Any | Uses up to M2 |
PAD | Independent | Cell is CUP compliant |
Cell Height | 75x115um | Up to M2 |
Pin Out and Function
Pin | Pin Type | Description |
ADHV0 | Power | First half of HV Clamp |
ADHV1 | Power | Second half of HV Clamp |
VSSUB | Ground | Substrate |
BIAS | VDD Bias | Highest on-die power |