SMIC 65nm LL DDR3/DDR2/LPDDR2 COMBO interface for DRAM application
Key Features
- DDR3/DDR2/LPDDR2 COMBO interface for DRAM application;
- SMIC 65nm Logic Low Leakage 1P10M Salicide 1.2V/1.8V/2.5V Process;
- Cell Size (Width * height) 40um * 270um with DUP stagger bonding pads;
- Work IO voltage: 1.2V/1.5V/1.8V;
- Programmable driven-strength, programmable ODT,support DDR3-1333,DDR2-1066,LPDDR2-1066;
- Suitable for 7, 8, 9 and 10 layers application ;
Technical Specifications
Foundry, Node
SMIC 65nm LL
Maturity
Silicon Proven
SMIC
Silicon Proven:
65nm
LL
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