SMIC 110nm G Multi-voltage programmable digital IO and analog IO

Key Features

  • Multi-voltage programmable digital IO and analog IO (customized);
  • Cell Size (Width * height) 60um * 110um with DUP in-line bonding pads;
  • Work voltage: 1.8V~3.3V power;
  • Programmable 8 level driven-strength, 2 level slew-rate, pull-up/down resistor and Schmitt-trigger control;
  • SMIC 0.13um Logic 1P8M Salicide 1.2/2.5/3.3V Design Rule;
  • Suitable for 5, 6, 7, 8 layers application;

Technical Specifications

Foundry, Node
SMIC 110nm G
Maturity
Silicon Proven
SMIC
Silicon Proven: 110nm G
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Semiconductor IP