SMIC 110nm G Compact digital, analog and oscillator IO

Key Features

  • Compact digital, analog and oscillator IO;
  • Cell Size (Width * height) 25um * 185um with DUP stagger bonding pads;
  • Work voltage: 3.3V power with 5V input tolerancer;
  • Compact IO size for critical core limited chip design;
  • SMIC 0.11um Mixed Signal 1.2V/3.3V Proce;
  • Suitable for 6, 7 and 8 layers application;

Technical Specifications

Foundry, Node
SMIC 110nm G
Maturity
Silicon Proven
SMIC
Silicon Proven: 110nm G
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Semiconductor IP