VeriSilicon SMIC 0.13um Low Leakage Process High-Speed Synchronous Memory Compiler optimized for Semiconductor Manufacturing International Corporation (SMIC) 0.13um Low Leakage Logic 1P8M Salicide 1.5/3.3V process can flexibly generate memory blocks via a friendly GUI or shell commands.
The compiler supports a comprehensive range of words and bits. While satisfying speed and power requirements, it has been optimized for area efficiency.
VeriSilicon SMIC 0.13um Low Leakage Process High-Speed Synchronous Memory Compiler uses four layers within the blocks and supports metal 4, 5, 6, 7 or 8 as the top metal. Dummy bit cells are designed in with the intention to enhance reliability
SMIC 0.13umLL Single-Port/Dual-Port SRAM, Single-Port/Two-Port Register File and Diffusion ROM Compiler
Overview
Key Features
- Low Leakage
- High Density
- High Speed
- Size Sensitive Self-Time Delay for Fast Access
- Automatic Power Down
- Tri-State Output(SRAM only)
- Write Mask Function(SRAM & Register File)
Technical Specifications
Foundry, Node
SMIC, 0.13um
Maturity
Silicon proven
SMIC
Pre-Silicon:
130nm
EEPROM
,
130nm
G
,
130nm
LL
,
130nm
LV
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