RF SP3T Switch used in TDD (Time Division Duplexing) mode for switching between TX and RX path with low loss, broadband and high isolation

Overview

RFSW02C RF SP3T Switch is used in TDD (Time Division Duplexing) mode for switching between TX and RX path with low loss, broadband and high isolation. This RF switch is Reflective type and the design incorporates series-shunt circuit elements with the locations optimized to achieve outstanding broadband performance in 2 - 20 GHz. The combination of broadband performance along with very fast switching and excellent settling time make this device ideal for many applications including Test & Measurement, EW and broadband communication systems. This switch is designed using the 0.1um GaAs pHEMT process. Results are shown in datasheet with all parasitics and coupling effects at desired frequency.

Key Features

Broad band frequency Range: 2-20 GHz
Low Insertion Loss: 1.7 dB
High Isolation: 40 dB
Fast Switching Speed
Reflective Configuration
Ultra Low DC Power Consumption
Die size: 1.15 mm x 1.85 mm

Benefits

Broadband frequency range
Low Insertion Loss
High Isolation
Fast Switching Speed
Reflective Configuration
Ultra Low DC Power Consumption
Low cost
Porting: IP can be ported to 65nm Si / CMOS node

Block Diagram

RF SP3T Switch used in TDD (Time Division Duplexing) mode for switching between TX and RX path with low loss, broadband and high isolation Block Diagram

Applications

Aerospace & Defense
Aircrafts and Radar systems
Test & Measurement
Space Based communication system

Deliverables

Schematic and Net List
Abstract Model (.lib file)
Layout View (Optional)
Behavioral Model (Circuit & EM Simulation)
Extracted View (Optional)
GDSII
DRC, LVS, Antenna report
Test bench with saved configuration(Optional)
Documentation

Technical Specifications

Foundry, Node

Win Semiconductor, 100 nm GaAs pHEMT process

Maturity

IC design and layout is complete, to be fabricated soon

Availability

Now

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