Register File with low power retention mode and 3 speed options
Overview
Low Leakage. Mobile Semiconductor's RF1P-ULL-GF22FDX memory compiler generates single-port Register File instances using the GLOBALFOUNDRIES 22nm FDX CMOS process. Each ultra-low leakage memory instance primarily uses low leakage HVT (LLHVT) devices and source biasing to minimize standby current. Read and write assist circuits ensure reliable operations with a periphery power supply as low as 0.72V.
Key Features
- Ultra low power data retention. Memory instances generated by the RF1P-ULL-GF22FDX go into a deep sleep mode that retains data at minimal power consumption.
- Self biasing. The RF1P-ULL-GF28FDX internal self-biasing capabilities provide ease of IP integration.
- High yield. To ensure high manufacturing yield, the RF1P-ULL-GF22FDX utilizes GLOBALFOUNDRIES’ low leakage 6T (0.110µ2) bit cells and is consistent with Design for Manufacturing (DFM) guidelines for the 22nm FDX process.
- High usability. All signal and power pins are available on metal 4 while maintaining routing porosity in metal 4. Power pins can optionally be made available on metal 5 to simplify the power connections at the chip level.
Benefits
- Low Power, high yield
Deliverables
- Register File Compiler up to 72Kb
- EDA Vies
- Verilog Test Bench
- Tessent BIST Synthesis Control
Technical Specifications
Foundry, Node
GF 22FDX
Maturity
Qualified in Volume Production
Availability
NOW
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