Micro Power Bandgap for TSMC 180nm

Overview

Key Features

• Less than 1µW power dissipation.
• Bandgap untrimmed precision of ±10% over process, temperature, and voltage.
• 100nA PTAT bias current output.
• 1.6V-2V operation
• Power down input.
• Built in switch for glitchless switching between main and sleep mode bandgaps.
• Base cell area 0.02mm2 in 0.18µ CMOS.
• Uses 4 metal layers.

Block Diagram

Applications

• Micro-power systems
• Sleep mode bandgap

Deliverables

• Verilog model.
• Metal outline.
• Spice netlist for LVS.
• Design review spice files.
• GDS format layout.
• Timing files.
• Integration notes.
• Production test notes.

Technical Specifications