Micro Power Bandgap for TSMC 180nm

Overview

The OT0120t130 is a 1.2V CMOS micro power CMOS bandgap and current reference cell with sub-µW power dissipation. Can be utilized as non-precision sleep mode bandgap, allowing a higher powered precision bandgap to be powered down.

Key Features

Less than 1µW power dissipation.
Bandgap untrimmed precision of ±10% over process, temperature, and voltage.
100nA PTAT bias current output.
1.6V-2V operation
Power down input.
Built in switch for glitchless switching between main and sleep mode bandgaps.
Base cell area 0.02mm2 in 0.18µ CMOS.
Uses 4 metal layers.

Block Diagram

Applications

Micro-power systems
Sleep mode bandgap

Deliverables

Verilog model.
Metal outline.
Spice netlist for LVS.
Design review spice files.
GDS format layout.
Timing files.
Integration notes.
Production test notes.
Service
- 6 months support included.
- Available detailed design review.
- 4 Weeks lead time for process ports to similar technologies

Technical Specifications

TSMC

Pre-Silicon: 180nm G

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