Metal programmable ROM compiler - Memory optimized for low power - Dual Voltage - compiler range up to 1024 k
Overview
Metal programmable ROM compiler - TSMC 130 nm G - Non volatile memory optimized for low power - Dual Voltage - compiler range up to 1024 k
Key Features
- Power reduction features
- Dual voltage capability
- Designed to minimize power consumption
- Decrease of fabrication costs
- Single metal layer via programmable ROM
- High Density architecture and bit cell
- 5% to 30% denser than contenders
- Ultra low leakage
- No leakage in memory plane
- Minimal leakage in memory periphery
Technical Specifications
Maturity
In_Production
TSMC
In Production:
130nm
G
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- Metal programmable ROM compiler - Memory optimized for low power and high density - compiler range up to 1024 k
- Metal programmable ROM compiler - Memory optimized for low power and high density - Dual Voltage - compiler range up to 1024 k