Metal programmable ROM compiler - Memory optimized for low power - compiler range up to 1024 k
Overview
Foundry Sponsored - Metal programmable ROM compiler - TSMC 90 nm LPeF - Non volatile memory optimized for low power - compiler range up to 1024 k
Key Features
- Foundry sponsored memory generator
- For nominal voltage characterization corner
- Configuration
- Dolphin's SVT bit-cell and HVT transistors for periphery
- Power reduction features
- Dual Voltage capability 1.2 V +/-10% & 1.0 V +/-10%
- Significant gain in dynamic power consumption compared to alternative ROM
- Decrease of fabrication costs
- Via 1 programmable ROM
- Key patent for high density with only one programming layer
- 5% to 10% gain in density over alternative ROM
- Ultra low leakage
- No leakage in memory plane
- Minimal leakage in memory periphery
- Easy Integration
- Depending on memory capacity up to 5 different MUX options can be selected
- High flexibility for address range and data range
Technical Specifications
Maturity
In_Production
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- Metal programmable ROM compiler - Memory optimized for low power and high density - compiler range up to 1024 k
- Metal programmable ROM compiler - Memory optimized for low power and high density - Dual Voltage - compiler range up to 1024 k
- Metal programmable ROM compiler - Memory optimized for low power and high density - Dual Voltage - compiler range up to 1024 k