MCU PAD - SMIC 55nm Eflash

Key Features

• 1.8V/3.3V/1.2V power supply can be used
• ? Including ultra-low leakage MCU I/O total solution
• ? Supports 1.2V core voltage power off, and get ultra-low leakage
• ? Provides a wide variety of interrupt I/O for customers to easily communicate with outside
• world at low power states
• ? The powerful level shift structure can help customers use fixed internal I/O voltage, but
• unfixed power voltage for the outside interface
• ? All I/O support that the voltage of PAD is higher than I/O power
• ? Based on SMIC 55nm embedded-flash process, supports 1P7M1TM
• ? DUP structure to help customer reduce cost
• ? Standard I/O size is 70um*128um
• ? Built in power-on-control function to prevent chip latch-up potential risk during chip
• powering up
• ? ESD specification
• HBM …….………………………..………..2KV
• MM …….……………………..…..………..200V
• CDM …….……………………..…..………500V
• Latch Up …………………………………...150mA

Benefits

• Cost saving compared to eflash technology

Deliverables

• Technical documents,GDS hard macro to foundry for IP merge

Technical Specifications