MCU PAD - SMIC 55nm Eflash
Key Features
- 5V/1.8V/3.3V/1.2V power supply can be used, not only compatible with normal 1.8V/3.3V
- powering system, and also 5V or lithium battery powering system
- ? Including ultra-low leakage MCU I/O total solution
- ? Supports 1.2V core voltage power off, and get ultra-low leakage
- ? Provides a wide variety of interrupt I/O for customers to easily communicate with outside
- world at low power states
- ? The powerful level shift structure can help customers use fixed internal I/O voltage, but
- unfixed power voltage for the outside interface
- ? All I/O support that the voltage of PAD is higher than I/O power??
- ? Built in power-on-control function to prevent chip latch-up potential risk during chip powering up
- Standard I/O size is low to 70um*128um
- HBM ESD: >2000V; MM: ±200V; CDM: ±500V; LU: 150mA
Benefits
- Cost saving compared to eflash technology
Deliverables
- Technical documents,GDS hard macro to foundry for IP merge
Technical Specifications
Foundry, Node
SMIC 55nm Eflash
Maturity
Silicon proven
Availability
immediate
SMIC
Silicon Proven:
55nm
G
,
55nm
LL