Low noise amplifier with lange couplers for 24-42 GHz frequencies for 5G , satcom and other applications

Overview

RFLN06C is a four stage low noise amplifier. It provides high gain over wide bandwidth, low noise figure, high isolation, stability. The LNA is designed to operate from 24-42 GHz using 0.1um GaAs pHEMT process. Bias current and gain can be set with the gate bias to allow the user to customize the current, gain and NF value to fit the applications. The LNA offers less than 2.7 dB of noise figure, 25.65 dB of small signal gain, OP1dB of 16.4 dBm along with the flexibility of setting current and gain makes this LNA an ideal front end amplifier in 5G, terrestrial communication system and radar applications. All results are shown in datasheet with considering of parasitics and coupling effects in layout.

Key Features

  • RF Frequency: 24–42 GHz
  • Noise Figure of 2.7dB
  • Small Signal Gain of 25.65 dB
  • OP1dB of 16.4 dBm
  • OIP3 of 27.7 dBm
  • Biasing: VDD=4V, VGG=-0.6V, ID= 157mA
  • Die Size: 1.15 mm x 1.85 mm
  • This IP is similar in performance with MACOM's XL1000-BD

Benefits

  • High gain
  • Flat gain over band
  • Low noise figure
  • Low current
  • Good input and output VSWR’s
  • Low cost
  • Porting: IP can be ported to 65nm Si / CMOS node

Block Diagram

Low noise amplifier with lange couplers  for 24-42 GHz frequencies for 5G , satcom and other applications Block Diagram

Applications

  • 5G mobile system
  • Satellite Communication
  • Point to point communication system
  • Terrestrial communication system
  • Radar Application

Deliverables

  • Schematic and Netlist
  • Abstract Model (.lib file)
  • Layout View (Optional)
  • Behavioral model (Circuit & EM simulation)
  • Extracted View (Optional)
  • GDSII
  • DRC, LVS, Antenna report
  • Test bench with saved configuration (Optional)
  • Documentation

Technical Specifications

Foundry, Node
Win Semiconductor, 100 nm GaAs pHEMT process
Maturity
IC is fabricated and tested.
Availability
Now
×
Semiconductor IP