Bluetooth Low Energy (BLE) RF IP

Overview

Bluetooth Low Energy (BLE) RF IP provides a transceiver designed for Bluetooth Smart applications. It is compliant with the BLE specification (part of Bluetooth 5.2, volume- 6) and supports GFSK modulation and demodulation. When combined with the Bluetooth Smart baseband and controller, this IP serves as a complete Bluetooth Smart solution. A Slave Serial Peripheral Interface (SPI) is used for connection to baseband or external MCU. Besides, this RF IP integrates on-chip Balun and TX/RX switch to save BOM. Moreover, LDOs and XO have been built in for power and clock generation.

Key Features

  • Single supply voltage: 1.1V to 1.8V
  • Operating junction temperature: -40ºC to 85ºC
  • RF output power: +10dBm
  • Power consumption: RX: <14mW; TX: <57mW@10dBm
  • RX sensitivity: < -97dBm
  • Built-in LDOs
  • Built-in on-chip Balun to save BOM
  • Built-in 32MHz Crystal Oscillator Driver
  • Support BR/EDR modes

Deliverables

  • Design Kit & Tape-out Kit
  • IP Datasheet and Application

Technical Specifications

Foundry, Node
GlobalFoundries, 22nm
Maturity
Silicon Proven
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Semiconductor IP