1.8V GPIO, 1.8V & 3.3V Analog in TSMC 180nm BCD

Overview

A Flip-Chip compatible I/O Library in TSMC 180nm BCD with 1.8V GPIO, 1.8V to 3.3V Analog, with associated ESD cells.

The silicon-proven I/O library in TSMC 180nm BCD provides a reliable and flexible solution for mixed-signal, power management, and BCD applications. The library includes a 1.8V digital I/O cell, optimized for up to 100MHz operation at 15pF, ensuring efficient high-speed performance. It also features 1.8V and 3.3V baseline analog I/Os, along with custom low-leakage 3.3V analog I/Os, tailored for low-power and precision-driven designs. Engineered for robustness, the I/Os meet 2kV HBM and 500V CDM ESD targets, providing strong protection against electrostatic events. With a balance of performance, power efficiency, and reliability, this I/O library enables seamless integration into demanding BCD and mixed- signal designs, making it an ideal choice for power management and analog-rich applications.

Operating Conditions

Parameter Value
Core Device 1.8V Standard
I/O Device 3.3V Standard
BEOL 1P6M
PAD Non Cup, 60um Pitch
Cell Height 80um
Temperature -40C to 125C
ESD 2kV HBM & 500V CDM, Latch-Up Immune

Cell Summary

Item Size
RS18_GPIO Standard 150MHz, 1.8V
RS18_DANA Analog I/O
RS18_ANA 1.8V Analog I/O
RS18_ANA3X 3.3V Analog I/O
RS18_VPP Programming VDD

ESD Summary

  •  ESD targets of 2kV HBM, 500V CDM, Latch-up Immune
  •  Has passed >4kV HBM and >800V CDM, depends on packaging
  •  Latch-Up immunity has passed >150mA

Key Features

  •  Output enable/disable
  •  Selectable Pull-up and Pull-down resistors
  •  Drive Strength Select
  •  Schmitt Trigger Input
  • Standards
  •  I2C
  •  DDC
  •  CEC
  •  SMBus

Block Diagram

1.8V GPIO,  1.8V &  3.3V Analog  in TSMC 180nm BCD Block Diagram

Technical Specifications

Foundry, Node
TSMC 180nm BCD
TSMC
In Production: 180nm G
Pre-Silicon: 180nm G
Silicon Proven: 180nm G
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Semiconductor IP