A TSMC 28nm Wirebond I/O Library with a switchable 1.8V/3.3V GPIO, with Specialized RF Wirebond Cells for LNAs.
A key attribute of this silicon-proven, inline library is to detect and adjust to a VDDIO supply of 1.8V or 3.3V during system operation. The GPIO can be configured as input, output, open-source, or open-drain with an optional 60kohm pull-up or pull-down resistor. Digital cells for 25MHz, 75MHz, and 150MHz allow optimization across SSO currents & power. Cells for I/O, core power & ground with built-in ESD circuitry are included. The library meets 2kV HBM, 500V CDM, and 2kV IEC 61000-4-2 standards.
Operating Conditions
| Parameter | Value |
| VDDIO | 1.8V or 3.3V |
| Core | 0.9V |
| VREF | 1.8V |
| Cell Size | 65x50um |
| Tj | -40C to 125C |
| Max Load1 | 50pF (10pF at speed) |
Cell Summary
| Cell Name | Description |
| IO_NS | 150MHz, 1.8V/3.3V I/O, N/S Orientation |
| IO_EW | 150MHz, 1,8V/3.3V I/O, E/W Orientation |
| IO75_NS | 75MHz, 1.8V/3,3V I/O, N/S Orientation |
| IO75_EW | 75MHz, 1.8V/3.3V I/O, E/W Orientation |
| IO25_NS | 25MHz, 1.8V/3.3V I/O, N/S Orientation |
| IO2_EW | 25MHz, 1.8V/3.3V I/O, E/W Orientation |
Supported Standards
- RGMII, eMMc, ONFI, SPI, QSPI, LVCMOS, LPDDR, I2C, DDC, CEC, SMBus
