1.8V/3.3V Multi-Voltage GPIO in TSMC 28nm

Overview

A Fail-Safe Digital I/O Library.

This silicon-proven TSMC 28nm Digital I/O Library delivers a high-performance, low-power interface solution designed for advanced digital applications. Featuring a triple-staggered architecture, this versatile library supports multi-voltage and multi-protocol GPIO, ensuring seamless integration across diverse system requirements. It includes a high-precision 3.3V MHz XTAL oscillator embedded within the pad ring, enhancing timing accuracy and system stability. The library is optimized for a wide range of protocols, including RGMII, eMMC, ONFI, SPI, QSPI, LVCMOS, LPDDR, DDC, CEC, and SMBus, providing maximum flexibility for modern SoC designs. Built for robust reliability, it meets stringent 2kV HBM and 500V CDM ESD protection standards, ensuring resilience against electrostatic discharge events.

Operating Conditions

Feature Value
Core Device 1.8V
I/O Device 1.8V Standard
Tj -40C to 125C
ESD 2kV HBM, 500V CDM

Cell Names

Cell Name Cell Type
TG_IO_NS Standard 150MHz I/O, w/ N/S Poly
TG_IO_EW Standard 150MHz I/O, w/ E/W Poly

Standards

  •  RGMII
  •  eMMC
  •  ONFI
  •  SPI
  •  QSPI
  •  LVCMOS
  •  LPDDR
  •  DDC
  •  CEC
  •  SMBus

Key Features

  •  Selectable Pull-up and Pull-down resistors
  •  Selectable Input Receiver
  •  Schmitt Trigger Input
  •  Non-Schmitt Trigger Input
  •  Fail-Safe Output
  •  Selectable Drive Strength

Block Diagram

1.8V/3.3V Multi-Voltage GPIO in TSMC 28nm Block Diagram

Technical Specifications

TSMC
Pre-Silicon: 28nm
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Semiconductor IP