Bandgap voltage reference forms temperature-compensated voltage level equal to the width of the band gap of silicon due to mutual compensation of temperature dependence of bipolar diodes and resistors. The system allowing to coordinate the cell with a voltage converter in the current is provided.
The block is fabricated on SMIC CMOS 0.18 um technology.
1.2 V Bandgap voltage reference
Overview
Key Features
- SMIC CMOS 0.18 um
- Output voltage 1.2 V
- Temperature-compensated voltage in a wide temperature range
- Low current consumption
- Small area
- Bipolar diode characteristics control
- Portable to other technologies (upon request)
Applications
- Supply voltage stabilization systems
- Comparison and detection systems
- System-on-chip for different purposes
- Measurement and calibration systems
- Technological research of microelectronic components
- Navigation systems
Deliverables
- Schematic or NetList
- Abstract model (.lef and .lib files)
- Layout view (optional)
- Behavioral model (Verilog)
- Extracted view (optional)
- GDSII
- DRC, LVS, antenna report
- Test bench with saved configurations (optional)
- Documentation
Technical Specifications
Foundry, Node
SMIC CMOS 0.18 um
Maturity
silicon proven
Availability
Now
SMIC
Silicon Proven:
180nm
G