Low Voltage SRAM IP
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49
IP
from 16 vendors
(1
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10)
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EverOn Ultra Low Voltage Embedded SRAM TSMC 22ULL
- Low operating voltage (down to the SRAM cell retention voltage)
- Low active power
- Multiple sleep modes for leakage management
- No need for separate SRAM power supply in DVFS or near-threshold designs – SRAM can operate from the logic supply.
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EverOn Ultra Low Voltage Embedded SRAM TSMC 40ULP Embedded Flash
- Low operating voltage (down to the SRAM cell retention voltage)
- Low active power
- Multiple sleep modes for leakage management
- No need for separate SRAM power supply in DVFS or near-threshold designs – SRAM can operate from the logic supply.
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EverOn Ultra Low Voltage Embedded SRAM TSMC 28HPC+
- Low operating voltage (down to the SRAM cell retention voltage)
- Low active power
- Multiple sleep modes for leakage management
- No need for separate SRAM power supply in DVFS or near-threshold designs – SRAM can operate from the logic supply.
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EverOn Ultra Low Voltage Embedded SRAM TSMC 40ULP
- Low voltage operation down to 0.6V
- Silicon proven
- Up to 75% dynamic power savings
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Samsung 28nm Low Voltage Single-Port SRAM Compiler
- Low Voltage
- Low Power
- High Density
- High Speed
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Dual Port SRAM compiler - Memory optimized for high density and low power - Dual Voltage - compiler range up to 72 k
- Reduce the die cost
- Unique architecture optimizing the periphery area for outstanding area gain
- Extend the battery life
- Leakage reduction thanks to careful design structures, optional retention mode and choice of SVT/HVT periphery
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Dual Port SRAM compiler - Memory optimized for high density and low power - Dual Voltage - compiler range up to 64 k
- Reduce the die cost
- Unique architecture optimizing the periphery area for outstanding area gain
- Extend the battery life
- Leakage reduction thanks to careful design structures, optional retention mode and choice of SVT/HVT periphery
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Dual Port SRAM compiler - Memory optimized for high density and low power - Dual Voltage - compiler range up to 64 k
- 1.Reduce the die cost
- Unique architecture optimizing the periphery area for outstanding area gain
- 2.Extend the battery life
- Leakage reduction thanks to careful design structures, optional retention mode and choice of SVT/HVT periphery