Low Voltage SRAM IP
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Single Port Low Voltage SRAM Memory Compiler on N22ULL - Low Power Retention and Column Repair
- Ultra-Low Leakage: High VT (HVT) are used to minimize leakage performance
- Bit Cell: Utilizes Low Leakage 6T bit cells to ensure high manufacturing yields
- Ultra Low Power Standby: Internally generated bias voltage for low leakage data retention
- Isolated Array and Periphery supplies: Periphery voltage can be shut off to further reduce standby power
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Single Port Low Voltage SRAM Memory Compiler on N22ULL
- Ultra-Low Leakage: High VT (HVT) are used to minimize leakage performance
- Bit Cell: Utilizes Low Leakage 6T bit cells to ensure high manufacturing yields
- Ultra Low Power Standby: Internally generated bias voltage for low leakage data retention
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Ultra Low Voltage Embedded SRAM - TSMC 22ULL
- Single port, single voltage rail synchronous SRAM
- Hierarchical Bit Line Architecture – sub-diving the array into columns/rows, banks and local blocks
- ‘Smart Assist’ – controls voltage drive to selected bit cells and bit lines in read and write cycles
- Pre-charge mux sense – read circuit that helps reduce both active and leakage power in the memory array
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Ultra Low Voltage Embedded SRAM - TSMC 28HPC+
- Single port, single voltage rail synchronous SRAM
- Hierarchical Bit Line Architecture – sub-diving the array into columns/rows, banks and local blocks
- ‘Smart Assist’ – controls voltage drive to selected bit cells and bit lines in read and write cycles
- Pre-charge mux sense – read circuit that helps reduce both active and leakage power in the memory array
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Ultra Low Voltage Embedded SRAM - TSMC 40ULP
- Single port, single voltage rail synchronous SRAM
- Hierarchical Bit Line Architecture – sub-diving the array into columns/rows, banks and local blocks
- ‘Smart Assist’ – controls voltage drive to selected bit cells and bit lines in read and write cycles
- Pre-charge mux sense – read circuit that helps reduce both active and leakage power in the memory array
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Dual Port SRAM compiler - Memory optimized for high density and low power - Dual Voltage - compiler range up to 72 k
- Reduce the die cost
- Unique architecture optimizing the periphery area for outstanding area gain
- Extend the battery life
- Leakage reduction thanks to careful design structures, optional retention mode and choice of SVT/HVT periphery
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Dual Port SRAM compiler - Memory optimized for high density and low power - Dual Voltage - compiler range up to 64 k
- Reduce the die cost
- Unique architecture optimizing the periphery area for outstanding area gain
- Extend the battery life
- Leakage reduction thanks to careful design structures, optional retention mode and choice of SVT/HVT periphery
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Dual Port SRAM compiler - Memory optimized for high density and low power - Dual Voltage - compiler range up to 64 k
- 1.Reduce the die cost
- Unique architecture optimizing the periphery area for outstanding area gain
- 2.Extend the battery life
- Leakage reduction thanks to careful design structures, optional retention mode and choice of SVT/HVT periphery
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UMC 40nm embedded high voltage (eHV) low power Process standard synchronous high density single port register file SRAM memory compiler.