Embedded Memories IP for GLOBALFOUNDRIES

Compare 18 Embedded Memories IP for GLOBALFOUNDRIES from 7 vendors (1 - 10)

Single Rail SRAM GLOBALFOUNDRIES 22FDX
- Single port SRAM compiler based on Racyics® R188 logic memory cell with dual-well architecture
- Supply voltage 0.55 V to 0.8 V enabled with Racyics® ABB
Dual-Rail SRAM Globalfoundries 22FDX
- Single port SRAM compiler based on P124 bitcell with Dual-supply-rail architecture
- Bitcell array supply voltage 0.8V and ULV core interface down to 0.4V enabled with Racyics' ABB
1Kbyte EEPROM IP with configuration 64p8w16bit
- Global Foundries Embedded EEPROM 0.13 um
- 1Kbyte of available memory 16(bit per word) x 8(words per page) x 64(pages) bit
- High density of memory cells
- Writing and erasing data by one high-voltage pulse
36Kbyte EEPROM IP with configuration 288p32w32bit
- Global Foundries Embedded EEPROM 0.13 um
- 36Kbyte of available memory 32(bit per word) x 32(words per page) x 288(pages) bit
- High density of memory cells
- Writing and erasing data by one high-voltage pulse
3.6Kbit EEPROM IP with configuration 28p8w16bit
- Global Foundries Embedded EEPROM 0.13 um
- 3.6Kbit of available memory 16(bit per word) × 8(words per page) × 28(pages) bit
- High density of memory cells
- Writing and erasing data by one high-voltage pulse
1KByte EEPROM IP with configuration 66p16w8bit
- Global Foundries Embedded EEPROM 0.13 um
- 1056 Byte of available memory 8(bit per word) x 16(words per page) x 66(pages) bit
- High density of memory cells
- Writing and erasing data by one high-voltage pulse
2048bits EEPROM with configuration 16p8w16bit
- GlobalFoundries Embedded EEPROM 0.13 um
- 2048bit of available memory 16(bit per word) × 8(words per page) × 16(pages) bit
NVM OTP in GF (180nm, 130nm, 65nm, 55nm, 40nm, 28nm, 22nm, 12nm)
NVM MTP in GF (180nm, 55nm)
1x64 Bits OTP (One-Time Programmable) IP, GlobalFoundries 22nmFDX 0.8V/1.8V Process
- Fully compatible with GlobalFoundries 22nmFDX 0.8V/1.8V
- Read voltage: 0.8V+/-10% VDD and 0.8V or 1.8V VDDP.