Embedded Memories IP for GLOBALFOUNDRIES
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Embedded Memories IP
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16
Embedded Memories IP
for GLOBALFOUNDRIES
from 7 vendors
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10)
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Single Rail SRAM GLOBALFOUNDRIES 22FDX
- Single port SRAM compiler based on Racyics® R188 logic memory cell with dual-well architecture
- Supply voltage 0.55 V to 0.8 V enabled with Racyics® ABB
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Dual-Rail SRAM Globalfoundries 22FDX
- Single port SRAM compiler based on P124 bitcell with Dual-supply-rail architecture
- Bitcell array supply voltage 0.8V and ULV core interface down to 0.4V enabled with Racyics' ABB
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1x64 Bits OTP (One-Time Programmable) IP, GlobalFoundries 22nmFDX 0.8V/1.8V Process
- Fully compatible with GlobalFoundries 22nmFDX 0.8V/1.8V
- Read voltage: 0.8V+/-10% VDD and 0.8V or 1.8V VDDP.
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4Kx8 Bits OTP (One-Time Programmable) IP, GF 22nm FDX 0.8V/1.8V Process
- Fully compatible with GF22nm FDX CMOS core logic process
- Low voltage: 0.8V+/-10% read and 1.2V+/-100mv program
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Tuneable multi-port register file architecture
- Custom Register File Architecture
- Power savings >50%
- Wide operating voltage range
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1Kbyte EEPROM IP with configuration 64p8w16bit
- Global Foundries Embedded EEPROM 0.13 um
- 1Kbyte of available memory 16(bit per word) x 8(words per page) x 64(pages) bit
- High density of memory cells
- Writing and erasing data by one high-voltage pulse
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36Kbyte EEPROM IP with configuration 288p32w32bit
- Global Foundries Embedded EEPROM 0.13 um
- 36Kbyte of available memory 32(bit per word) x 32(words per page) x 288(pages) bit
- High density of memory cells
- Writing and erasing data by one high-voltage pulse
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3.6Kbit EEPROM IP with configuration 28p8w16bit
- Global Foundries Embedded EEPROM 0.13 um
- 3.6Kbit of available memory 16(bit per word) × 8(words per page) × 28(pages) bit
- High density of memory cells
- Writing and erasing data by one high-voltage pulse