Embedded Memories IP for GLOBALFOUNDRIES

Compare 15 Embedded Memories IP for GLOBALFOUNDRIES from 7 vendors (1 - 10)

3.6Kbit EEPROM IP with configuration 28p8w16bit
- 130GF_EEPROM_08 IP is a nonvolatile electrically erasable programmable read-only memory (EEPROM) with volume 3.6 Kbits, which is organized as 28 pages of 8 words by 16 bit with single-bit output data and parallel write data.
- Data programming in EEPROM consists of 2 consecutive phases - erasing and writing.
Single Rail SRAM GLOBALFOUNDRIES 22FDX
- Ultra-low voltage logic designs using adaptive body biasing demand dense SRAM solutions which fully integrate in the ABB aware implementation and sign-off flow of the Racyics® ABX Platform solution.
- The Racyics® Single Rail SRAM supports ultra-low voltage operation down to 0.55 V where logic designs with Minimum-Energy-Point are implemented.
Dual Rail SRAM Globalfoundries 22FDX
- Single port SRAM compiler based on P124 bitcell with Dual-supply-rail architecture
- Bitcell array supply voltage 0.8V and ULV core interface down to 0.4V enabled with Racyics' ABB
1KByte EEPROM IP with configuration 66p16w8bit
- Global Foundries Embedded EEPROM 0.13 um
- 1056 Byte of available memory 8(bit per word) x 16(words per page) x 66(pages) bit
- High density of memory cells
- Writing and erasing data by one high-voltage pulse
2048bits EEPROM with configuration 16p8w16bit
- GlobalFoundries Embedded EEPROM 0.13 um
- 2048bit of available memory 16(bit per word) × 8(words per page) × 16(pages) bit
1Kbyte EEPROM IP with configuration 64p8w16bit
- Global Foundries Embedded EEPROM 0.13 um
- 1Kbyte of available memory 16(bit per word) x 8(words per page) x 64(pages) bit
- High density of memory cells
- Writing and erasing data by one high-voltage pulse
36Kbyte EEPROM IP with configuration 288p32w32bit
- Global Foundries Embedded EEPROM 0.13 um
- 36Kbyte of available memory 32(bit per word) x 32(words per page) x 288(pages) bit
- High density of memory cells
- Writing and erasing data by one high-voltage pulse
3.6Kbit EEPROM IP with configuration 28p8w16bit
- Global Foundries Embedded EEPROM 0.13 um
- 3.6Kbit of available memory 16(bit per word) × 8(words per page) × 28(pages) bit
- High density of memory cells
- Writing and erasing data by one high-voltage pulse
Memory Compilers
- Dolphin provides a wide range of Memory Compilers and Specialty Memory (ROM, Multi Port RF, CAM, etc.) optimized to meet even the most demanding requirements for high performance, high density and low power.
Memory Compiler in TSMC (16nm,22nm,28nm,40nm,55nm,90BCD+,110nm,152nm,180BCD)
- Synchronous read/write operation
- Low leakage current and lower operation power consumption
- Minimum metal layer requirement: 4/3 metal layers
- High density layout structure and small area design

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