SMIC 130nm G Multi-voltage programmable digital IO for SD3.0/eMMC4.5 card application

Key Features

  • Multi-voltage programmable digital IO for SD3.0/eMMC4.5 card application;
  • Cell Size (Width * height) 83um * 140um with DUP in-line bonding pads;
  • Work voltage: 1.2V~3.3V power;
  • Programmable 8 level driven-strength, pull-up/down resistor and Schmitt-trigger control;
  • SMIC 0.13?m Logic Salicide 1.2V/3.3V Process;
  • Suitable for 6, 7 and 8 layers application (single top metal);

Technical Specifications

Foundry, Node
SMIC 130nm G
Maturity
In Production
SMIC
In Production: 130nm G
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Semiconductor IP