MCU PAD - SMIC 55nm Eflash

Key Features

  • 5V/1.8V/3.3V/1.2V power supply can be used, not only compatible with normal 1.8V/3.3V
  • powering system, and also 5V or lithium battery powering system
  • ? Including ultra-low leakage MCU I/O total solution
  • ? Supports 1.2V core voltage power off, and get ultra-low leakage
  • ? Provides a wide variety of interrupt I/O for customers to easily communicate with outside
  • world at low power states
  • ? The powerful level shift structure can help customers use fixed internal I/O voltage, but
  • unfixed power voltage for the outside interface
  • ? All I/O support that the voltage of PAD is higher than I/O power??
  • ? Built in power-on-control function to prevent chip latch-up potential risk during chip powering up
  • Standard I/O size is low to 70um*128um
  • HBM ESD: >2000V; MM: ±200V; CDM: ±500V; LU: 150mA

Benefits

  • Cost saving compared to eflash technology

Deliverables

  • Technical documents,GDS hard macro to foundry for IP merge

Technical Specifications

Foundry, Node
SMIC 55nm Eflash
Maturity
Silicon proven
Availability
immediate
SMIC
Silicon Proven: 55nm G , 55nm LL
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Semiconductor IP