Front End Module operating from 24 – 30 GHz and can be used in low power Ka band applications

Overview

RFFEM01C Front End Module operates from 24 – 30 GHz and can be used in low power Ka band application. The input and output are matched to 50 ohms with on-chip DC blocking capacitors. The device is specifically designed to use in point-to-point radios for 5G RF Transceiver & SATCOM. The technology used to design front-end module is 0.1um GaAs pHEMT process. Results are shown in datasheet with all parasitics & coupling effects at desired frequency.

Key Features

RF Frequency: 24-30 GHz
TX Gain of 12.7 dB
RX Gain of 20 dB
TX Output P1dB of 17.9 dBm
RX Output P1dB of 15.9 dBm
Noise Figure of 3 dB
Bias: VDD=4V, VGG= - 0.5V, ID= 261mA
Die size: 1.5 mm x 2.5 mm

Benefits

High power and gain
Flat gain over band
Low noise figure
50 ohm input and output match
Low cost
Porting: IP can be ported to 65nm Si / CMOS node

Block Diagram

Applications

5G mobile system
5G Wireless Base Stations and Terminals
Satellite Communication
Point to point communication system

Deliverables

Schematic and Netlist
Abstract Model (.lib file)
Layout View (Optional)
Behavioral Model (Circuit & EM Simulation)
Extracted View (Optional)
GDSII
DRC, LVS, Antenna report
Test bench with saved configuration (Optional)
Documentation

Technical Specifications

Foundry, Node

Win Semiconductor, 100 nm GaAs pHEMT process

Maturity

IC design and layout is complete, to be fabricated soon

Availability

Now

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