IP Catalog > Analog IP > RF IP > Front End Module operating from 24 – 30 GHz and can be used in low power Ka band applications

Front End Module operating from 24 – 30 GHz and can be used in low power Ka band applications

Overview

RFFEM01C Front End Module operates from 24 – 30 GHz and can be used in low power Ka band application. The input and output are matched to 50 ohms with on-chip DC blocking capacitors. The device is specifically designed to use in point-to-point radios for 5G RF Transceiver & SATCOM. The technology used to design front-end module is 0.1um GaAs pHEMT process. Results are shown in datasheet with all parasitics & coupling effects at desired frequency.

Key Features

  • RF Frequency: 24-30 GHz
  • TX Gain of 12.7 dB
  • RX Gain of 20 dB
  • TX Output P1dB of 17.9 dBm
  • RX Output P1dB of 15.9 dBm
  • Noise Figure of 3 dB
  • Bias: VDD=4V, VGG= - 0.5V, ID= 261mA
  • Die size: 1.5 mm x 2.5 mm

Benefits

  • High power and gain
  • Flat gain over band
  • Low noise figure
  • 50 ohm input and output match
  • Low cost
  • Porting: IP can be ported to 65nm Si / CMOS node

Block Diagram

Front End Module operating from 24 – 30 GHz and can be used in low power Ka band applications Block Diagram

Applications

  • 5G mobile system
  • 5G Wireless Base Stations and Terminals
  • Satellite Communication
  • Point to point communication system

Deliverables

  • Schematic and Netlist
  • Abstract Model (.lib file)
  • Layout View (Optional)
  • Behavioral Model (Circuit & EM Simulation)
  • Extracted View (Optional)
  • GDSII
  • DRC, LVS, Antenna report
  • Test bench with saved configuration (Optional)
  • Documentation

Technical Specifications

Short description
Front End Module operating from 24 – 30 GHz and can be used in low power Ka band applications
Vendor
Vendor Name
Foundry, Node
Win Semiconductor, 100 nm GaAs pHEMT process
Maturity
IC design and layout is complete, to be fabricated soon
Availability
Now
Request Info

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