DCDC - SMIC 110nm generic

Key Features

  • Quiescent current is low to30uA(exclude BGP)
  • Ultra-low shutdown leakage:100nA
  • Low output ripple: <25mV
  • 200mA peak output Current(Vin>=3.0V)

Benefits

  • Ultra low shutdown leakage

Deliverables

  • Technical documents,GDS hard macro to foundry for IP merge

Technical Specifications

Foundry, Node
SMIC 110nm generic
Maturity
Silicon proven
Availability
immediate
SMIC
Silicon Proven: 110nm G
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Semiconductor IP