Power input 3.3V, VBG=1.204V Band-gap, UMC 55nm eFlash process
Overview
Power input 3.3V, VBG=1.204V Band-gap, UMC 55nm eFlash process
Technical Specifications
Short description
Power input 3.3V, VBG=1.204V Band-gap, UMC 55nm eFlash process
Vendor
Vendor Name
Foundry, Node
UMC 55nm eNVM EFLASH/EE2PROM/LP-SPLIT_GATE
UMC
Pre-Silicon:
55nm
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