GSMC 0.18um General Process, Low Power circuit design, Diffusion ROM
Overview
Based on GSMC 0.13um 1.5V/12V eFlash process, current design of the IP detects light with photodiode. When the incident light power is more than 70mW/m2, the output is low; otherwise, the output is high.
Key Features
- Process: GSMC 0.13um IBLP 4P5M dual gate e-flash process (1.5v/HV)
- MOS devices being used: nch, pch
- Wavelength range of spectral response: 400nm~1100nm
- Peak sensitivity wavelength: 900nm
- Current responsibility: 0.2A/W@600nm
- Dark current: <10pA
- Settling time: 20us
- Typical current consumption: 100uA
- Power down current: 0.1uA
- Reference voltage adjust step: 50mV
- Operating Junction Temperature: -40°C~+25°C~+125°C
Technical Specifications
Foundry, Node
GSMC 0.18um
Maturity
Pre-silicon
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