BJT VCO 4.8V + 2.5V, 3.4-4.8 GHz - IHP 250nm SiGe
Overview
BJT VCO 4.8V + 2.5V, 3.4-4.8 GHz - IHP 250nm SiGe
Technical Specifications
Foundry, Node
IHP 250nm SiGe, 2.5V MOS + 7.5BVce BJT
Maturity
Silicon Verified