IP Catalog > Nonvolatile Memory

Nonvolatile Memory IP

Filter
Filter

Login required.

Sign in

Login required.

Sign in

Search (216)
Compare 216 IP from 30 vendors (1 - 10)
  • Multiple - Time Programmable Non-Volatile Memory
    • Density : 8bits ~ 1024Kbits
    • Read voltage : low to 1.0V (LV)
    • Write mode : Byte / Word write
    • Read mode : Byte / Word read
  • On-chip Nonvolatile APB Memory Controller
    • Fully AMBA 2 APB-compliant
    • Compatible with AMBA 3 APB
    • Multiple memory sizes and variable number of NVM blocks
    • Configurable 8-, 16-, or 32-bit data bus size
  • On-chip Nonvolatile AHB Memory Controller
    • Provides an Industry-Standard Software Interface to Microsemi Fusion Flash Memory
    • Implements a Subset of the Common Flash Memory Interface Specification Release 2.0
    • Implements Standard Slave AHB Bus Hardware Interface
    • Supports Read, Automatic Write and Erase, and Status Operations
  • LPDDR5X Secondary/Slave (memory side!) PHY
    • JEDEC standard LPDDR5X @ 8533Mbps (Mbits per second per pin)
    • Flexible channel architecture – 16- or 32-bit data path widths, supporting either single x32 channel or two x16 channels – 64-bit support, supporting two x32 channels
    • Support for byte-mode DRAM devices for high capacity systems
    • ZQ Calibration
  • LPDDR5 Secondary/Slave (memory side!) PHY
    • JEDEC standard LPDDR5 @ 6400 Mb per second per pin.
    • Flexible channel architecture – 16- or 32-bit data path widths, supporting either single x32 channel or two x16 channels – 64-bit support, supporting two x32 channels
    • Support for byte-mode DRAM devices for high capacity systems
    • ZQ Calibration
  • LPDDR4x Secondary/Slave (memory side!) PHY
    • JEDEC standard LPDDR4X @ 4267 Mb per second per pin.
    • Flexible channel architecture
  • LPDDR4x/5 Secondary/Slave (memory side!) PHY
    • Supports JEDEC standard LPDDR5, LPDDR4X, LPDDR4
    • Secondary side PHY
    • Custom implementations available
  • ReRAM as FTP/OTP Memory
    • Non-volatile Memory Flexibility
  • Spin Orbit Torque Magnetic Random-Access Memory
    • With the advent of mobile and handheld electronic devices, the demand for much smaller, faster and ultra-low power systems keeps growing. Yet to meet such needs, the microelectronics industry cannot rely anymore on following Moore’s law like it has for the last decades.
    • Embedded memories, which represent a major part of the circuits silicon area have now become a major contributor to power dissipation in integrated system circuits. To solve these issues, several technologies are intensively investigated to replace existing embedded memories (SRAM and Flash).
    • Spin-Transfer Torque Magnetic Random Access Memory (STT-MRAM) has been chosen by the industry as the non-volatile memory technology of choice to replace Embedded Flash at advanced technology nodes.
  • 55nmHV MTP Non Volatile Memory for Standard CMOS Logic Process
    • 1K-Time Programmable (MTP)
    • > 10 years retention
    • Uses standard CMOS process with no additional masks
×
Semiconductor IP