Driver Amplifier operating from 1-16 GHz and can be used in wide band application or to drive the high-power amplifier

Overview

RFDA07C Driver Amplifier operates from 1 - 16 GHz and can be used in wide band application or to drive the high-power amplifier. The amplifier provides 24 dB small signal gain and 19.8 dBm of Output P1dB. The input and output are matched to 50 ohms with on-chip DC blocking capacitors. The device is specifically designed to use in point-to-point radios for cellular backhaul Application, 5G RF Transceiver & SATCOM. The technology used to design DA is 0.1um GaAs pHEMT process. Results are shown in datasheet with all parasitics & coupling effects at desired frequency.

Key Features

RF Frequency: 1-16 GHz
Gain of 24 dB
Output P1dB of 19.8 dBm
OIP3 of 28.2 dBm
Output Saturated Power: 22 dBm
Noise Figure @ 2.4 GHz : 2.2 dB
Noise Figure @ 5 GHz : 2.1 dB
Noise Figure @ 8 GHz : 2.2 dB
Noise Figure @ 12 GHz : 2.5 dB
Noise Figure @ 16 GHz : 3.5 dB
Bias: VDD1, VDD2 = 4 V, VGG1, VGG2 = -0.4 V,
ID= 122 mA
0.1um GaAs pHEMT Technology
Die Size: 1.15 mm x 1.54 mm
This IP is similar in performance with Custom MMIC's CMD295

Benefits

Wideband gain
50? Matched RF Input and Output
Wideband stability
Low cost
Low current
Porting: IP can be ported to 65nm Si / CMOS node

Block Diagram

Applications

Satellite Communication
Point to point communication system
Backhaul Application
Microwave Radio
Military & Space
RADAR

Deliverables

Schematic and Netlist
Abstract Model (.lib file)
Layout View(Optional)
Behavioral model (Circuit & EM simulation)
Extracted View(Optional)
GDSII
DRC, LVS, Antenna report
Test bench with saved configuration(Optional)
Documentation

Technical Specifications

Foundry, Node

Win Semiconductor, 100 nm GaAs pHEMT process

Maturity

IC design and layout is complete, to be fabricated soon

Availability

Now

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