Band Gap IP, Input: 2.0V - 3.6V, VBG=1.21V, HJTC 0.18um eFlash/G2 process
Overview
Input 2.0V-3.6V, VBG=1.21V bandgap, HJTC 0.18um eFlash process.
Technical Specifications
Foundry, Node
HJTC 180nm eFlash/G2
Related IPs
- Band Gap IP, Input: 2.5V - 5.5V, VBG=1.21V, HJTC 0.18um eFlash/G2 process
- Band Gap IP, Input: 2.0V - 3.6V, VBG=1.22V, UMC 0.153um MS process
- Band Gap IP, Input: 2.0V - 3.3V, VBG=1.23V, UMC 0.25um Logic process
- Band Gap IP, Input: 2.0V - 4.0V, VBG=1.23V, UMC 0.18um G2 process
- Band Gap IP, Input: 1.8V - 3.6V, VBG=0.615V, UMC 0.162um eHV process
- Band Gap IP, Input: 2.0V - 3.3V, VBG=1.23V, UMC 0.18um G2 process