TSENS1KPS110 is an IP for voltage, temperature sensing of the silicon chip die. Each voltage sensor node is connected with the central controller with a single wire digital signal for communicating the sensor data in real time. Dedicated enable signal is provided with each node to enable or disable the operation for power management. IP has parallel communication interface with command and response protocol using two 12bit digital I/O ports. Alert signals can also be configured to alert low and high threshold crossing using parallel communication port.
Sensor has trimming options to calibrate the accuracy of temperature probes.
Design is based on ultra-low power delta sigma modulator with excellent noise performance and high accuracy eliminating all inherent offset and gain errors while implementing the compensation inbuilt in the loop.
14 bit digital output CMOS voltage, temperature sensor in 110nm
Overview
Key Features
- 14b Digital voltage and Temperature Resolution
- 1Ksps Maximum data rate
- <100uA Current Consumption
- Ultra-low leakage power
- Ultra-low active power
- Excellent temperature accuracy
- +/- 1.5C after single room temperature trim
- Compact Area
- -40C to +125C Temperature Range
- 110nm
Benefits
- < One degree accurate
- Thermal sensor
Applications
- Die Temperature monitoring
- Under and over temperature monitoring
- System performance enhancement
Deliverables
- Datasheet
- Hard Macro (GDSII)
- Characterization Report (as applicable)
- Abstract View (LEF)
- Integration and Customer
Technical Specifications
Foundry, Node
110nm
Maturity
GDS available
Availability
2023
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