12 Bit ADC - SMIC 55nm Eflash

Key Features

  • Supports 1Ksps~3Msps sampling rate; 4ch differential/ 8ch single-ended
  • High performance: ENOB=11.2bit @1Msps;
  • Ultra-low power: <1uA @1Ksps; 8uA @32Ksps; 200uA @1Msps;
  • Ultra-low leakage; IP area: 0.083mm2

Benefits

  • Cost saving compared to eflash technology

Deliverables

  • Technical documents,GDS hard macro to foundry for IP merge

Technical Specifications

Foundry, Node
SMIC 55nm Eflash
Maturity
Silicon proven
Availability
immediate
SMIC
Silicon Proven: 55nm G , 55nm LL
×
Semiconductor IP