GSMC 0.18um 1.8V/3.3V DUP I/O Library

Overview

VeriSilicon GSMC 0.18um 1.8V/3.3V DUP I/O Library developed by VeriSilicon is optimized for Grace Semiconductor Manufacturing Corporation (GSMC) 0.18um Logic 1P5M Salicide 1.8/3.3V process. This library supports Device Under Pad (DUP). It can take 5V tolerance and work with configurable and variable driving strength between 2mA - 24mA.

Key Features

  • GSMC 0.18um Logic 1P5M Salicide 1.8V/3.3V process
  • Low area and low cost design using DUP technique
  • 3.3V IO, 1.8V core, 5V tolerant
  • Configurable output driving capability with different slew rate
  • Supports configurable pull up and pull down resistor
  • Supports both CMOS input and Schmitt input with LVTTL compatible
  • Both inline and staggered compatible IO pads
  • Suitable for five metal layers of physical design
  • Provides 2Mhz ~ 27Mhz OSC IO cell
  • Competitive pad pitch and height

Technical Specifications

Foundry, Node
GSMC 0.18um
Maturity
GDS Ready
Availability
Now
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Semiconductor IP