Specialized 1.2V to 3.3V Fail-Safe GPIO and 3.3V I2C Open-Drain in 110nm
Overview
A 110nm wire-bond, muti-voltage, multi-standard, general-purpose input-output with open-drain input-output capability is also a fail-safe I/O design. Compliant with various standards regarding all 3.3V, 1.8V, and 1.2V operation. The ODIO mode targets the official I2C standard.
Key Features
- Multi-voltage 1.8V / 3.3V Fail-Safe GPIO
- 3.3V ODIO
- GPIO: 100MHz at 75pF
- 3.3V programming gate cell
- 100K? pull-down or pull-up resistor
- Selectable Schmitt trigger receiver
- ESD: 2kV HBM, 500V CDM
Benefits
- Fail-Safe Architecture.
- 100x220um cell size
- Sleep retention mode
- Built-in regulation PMOS device
Deliverables
- GDS
- CDL Netlist
- Spectre Netlist
Technical Specifications
Foundry, Node
110nm
Maturity
Silicon-Proven
Availability
Immediate
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