HBM3/3E PHY & Controller

Overview

This document describes a general layout scheme and Innosilicon HBM3/3E PHY connecting to the controller using a DFI digital interface. All interface timing is in 1X SDR clock domain. This interface is flexible and can be converted to any customer desired format and timing sequence. The PHY to controller interface is running at single data rate (SDR) therefore read/write bus is double width.

Key Features

  • Compliant with JEDEC Specification, up to 6400Mbps for HBM3, up to 9600Mbps for HBM3E
  • Compliant with DFI 3.1 Specifications (dfi_clk_1x : WDQS = 1:4)
  • supports up to 16 channels with 64 DQ-width + Optional DBI/ECC/SEV pin support/channel
  • Supports command and DQ parity
  • Supports per-AWORD de-skew tuning for command
  • Supports bit-group de-skew tuning for data
  • Supports CMD lane repair
  • Supports DQ lane repair
  • Supports automatic and soft command bus training
  • Supports command and data IO driver strength adjustment
  • Supports automatic and soft RX DQS training and bypass RX DQS control
  • Supports automatic and soft WDQS2CK training and bypass WDQS2CK Control
  • Supports automatic and soft read training
  • Supports automatic and soft write training
  • Supports bypass write and read trainings
  • Supports automatic retraining mode and retraining bypass mode
  • Supports ZQ calibration
  • Supports Built-In Self-Test
  • Supports boundary scan of pad
  • Supports scan chain
  • APB 3.0 interfaces to configure registers
  • Supports IEEE1500 port for direct access to the memory stack and PHY using APB
  • Supports HBM DRAM initialized by PHY

Deliverables

  • Verilog models
  • LEF
  • Place-and-route abstracts
  • GDSII files
  • LVS netlists
  • Databook, Application notes
  • Silicon validation and ESD testing results
  • Optional PCB reference design and Package Electrical Model
  • Documentation

Technical Specifications

Foundry, Node
Samsung 4nm, TSMC 7/5/4nm
Samsung
In Production: 4nm
Silicon Proven: 4nm
TSMC
In Production: 4nm , 5nm , 7nm
Silicon Proven: 4nm , 5nm , 7nm
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Semiconductor IP