Hamming, RS, BCH, LDPC - The Alphabet Soup of NAND ECC
February 25, 2011
Several years ago, using NAND flash was pretty simple: the devices were reliable enough that when you wrote data, you had a pretty good chance of reading back the same data. Over time, however, NAND flash has increased storage density by moving to smaller geometries and storing more bits per cell, which has required higher levels of error correction in order to ensure the integrity of the data on the flash device.
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