Is 2D Scaling Dead? Looking at Transistor Design
In the last blog post, I started to examine the question “is 2D scaling really dead or just mostly dead?” I looked at the most challenging issue for 2D scaling, lithography. But even if we can draw the device patterns somehow on the wafer at smaller and smaller geometries, does not necessarily mean that the circuits will deliver the performance (speed, area, power) improvements that Moore’s Law has delivered in the past. Indeed, as transistors get smaller (gate length and width) they also get shorter (oxide thickness). There are limits to the improvements we can gain in power and speed. We’ll talk about those next.
To read the full article, click here
Related Semiconductor IP
- 1.8V/3.3V I/O library with ODIO and 5V HPD in TSMC 16nm
- 1.8V/3.3V I/O Library with ODIO and 5V HPD in TSMC 12nm
- 1.8V to 5V GPIO, 1.8V to 5V Analog in TSMC 180nm BCD
- 1.8V/3.3V GPIO Library with HDMI, Aanlog & LVDS Cells in TSMC 22nm
- Specialed 20V Analog I/O in TSMC 55nm
Related Blogs
- Is 2D Scaling Really Dead or Just Mostly Dead?
- Is 2D Scaling Dead? - Other Considerations
- The Future Of Scaling
- How far can multicore SoC scaling go? Cavium's Octeon II
Latest Blogs
- Cadence Unveils the Industry’s First eUSB2V2 IP Solutions
- Half of the Compute Shipped to Top Hyperscalers in 2025 will be Arm-based
- Industry's First Verification IP for Display Port Automotive Extensions (DP AE)
- IMG DXT GPU: A Game-Changer for Gaming Smartphones
- Rivos and Canonical partner to deliver scalable RISC-V solutions in Data Centers and enable an enterprise-grade Ubuntu experience across Rivos platforms