FDSOI to Get Embedded MRAM, Flash Options at 28nm
Peter Clarke, EETimes
7/26/2016 04:20 AM EDT
LONDON—Samsung Foundry is going to offer both spin torque transfer magnetic RAM (STT-MRAM) and flash as embedded non-volatile memory options on its 28nm FDSOI manufacturing process.
Kelvin Low, responsible for marketing and business development at Samsung Foundry, told EE Times Europe, that the company roadmap shows two phases of embedded NVM rollout for 28FDSOI. The first is eFlash risk production by the end of 2017 and the second is eMRAM risk production by the end of 2018.
To read the full article, click here
Related Semiconductor IP
- Camera Interface (AHB Bus)
- ITU-R BT.1120 Decoder – HD 1920x1080p
- ITU-R BT.656 Decoder
- ITU-R BT.656 Encoder
- Color Space converter & Chroma Resampler- 4:4:4 RGB to 4:2:2 Y’CbCr
Related News
- GlobalFoundries and Microchip Announce Microchip's 28nm SuperFlash® Embedded Flash Memory Solution in Production
- Renesas Electronics Develops Industry's First 28nm Embedded Flash Memory Technology for Microcontrollers
- Samsung and STMicroelectronics Sign Strategic Agreement to Expand 28nm FD-SOI Technology
- Cadence Announces Availability of IP Solutions on 28nm FD-SOI Process
Latest News
- ZeroPoint Technologies Unveils Groundbreaking Compression Solution to Increase Foundational Model Addressable Memory by 50%
- Breker RISC-V SystemVIP Deployed across 15 Commercial RISC-V Projects for Advanced Core and SoC Verification
- AheadComputing Raises $21.5M Seed Round and Introduces Breakthrough Microprocessor Architecture Designed for Next Era of General-Purpose Computing
- Intel’s Altera Unit Nears Sale as Silver Lake Reportedly Leads Talks
- Cadence Reports Fourth Quarter and Fiscal Year 2024 Financial Results