FDSOI to Get Embedded MRAM, Flash Options at 28nm
Peter Clarke, EETimes
7/26/2016 04:20 AM EDT
LONDON—Samsung Foundry is going to offer both spin torque transfer magnetic RAM (STT-MRAM) and flash as embedded non-volatile memory options on its 28nm FDSOI manufacturing process.
Kelvin Low, responsible for marketing and business development at Samsung Foundry, told EE Times Europe, that the company roadmap shows two phases of embedded NVM rollout for 28FDSOI. The first is eFlash risk production by the end of 2017 and the second is eMRAM risk production by the end of 2018.
To read the full article, click here
Related Semiconductor IP
- UCIe Chiplet PHY & Controller
- MIPI D-PHY1.2 CSI/DSI TX and RX
- Low-Power ISP
- eMMC/SD/SDIO Combo IP
- DP/eDP
Related News
- GlobalFoundries and Microchip Announce Microchip's 28nm SuperFlash® Embedded Flash Memory Solution in Production
- Renesas Electronics Develops Industry's First 28nm Embedded Flash Memory Technology for Microcontrollers
- Samsung and STMicroelectronics Sign Strategic Agreement to Expand 28nm FD-SOI Technology
- Cadence Announces Availability of IP Solutions on 28nm FD-SOI Process
Latest News
- Frontgrade Gaisler and wolfSSL Collaborate to Enhance Cybersecurity in Space Applications
- Digital Core Design Unveils DPSI5 - The Next-Generation IP Core for PSI5 Communication
- Matrox Video and intoPIX Expand Interoperable IPMX & ST 2110 Solutions with JPEG XS Innovation at NAB 2025
- HCLTech joins Samsung Advanced Foundry Ecosystem as a Design Solution Partner
- TeraSignal to Showcase Retimer-Less PCIe 6.0 over Optics Featuring Synopsys IP at OFC 2025