I2C IP for Samsung

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Compare 3 I2C IP for Samsung from 2 vendors (1 - 3)
  • High voltage tolerant I/O
    • Scalable robustness
    • Area efficient
    • low capacitance option
  • IO 1.8V GPIO in Samsung (4nm)
    • Supports 1.8V/2.5V/3.3V mixed-voltage-tolerant/failsafe output buffer
    • Fully programmable output driver strengths, input Schmitt trigger, and output slew rate
    • Supports circuit-under-pad (CUP), non-CUP-inline and staggered-bond pad placement
    • Supports retention and bus-keeper feature
  • IO 1.2V GPIO in Samsung (4nm)
    • Supports 1.8V/2.5V/3.3V mixed-voltage-tolerant/failsafe output buffer
    • Fully programmable output driver strengths, input Schmitt trigger, and output slew rate
    • Supports circuit-under-pad (CUP), non-CUP-inline and staggered-bond pad placement
    • Supports retention and bus-keeper feature
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Semiconductor IP