Process/Voltage/ Temperature Sensor

Overview

Innosilicon PVT Sensor IP is designed for on-chip temperature measurement. Besides temperature, it also can measure on-chip voltage, such as core power supply voltage, which can be used to monitor the IR drop on core power supply.
Innosilicon PVT Sensor IP consists of SARADC, bandgap circuit, voltage buffers, mux circuit, oscillator and digital logic. The SARADC is 10-bit successive approximation analog-to-digital converter. The sampling rate is up to 100KS/s. The bandgap circuit produces an accurate voltage with very small temperature coefficient, which is used as the reference voltage of SARADC. The bandgap circuit also produces a voltage that is related to temperature. This voltage is sampled by SARADC and converted to digital signal. The oscillator generates a clock to detect process corner. The digital logic receives clock and control signals from SoC logic, and outputs measurement result data to SoC logic.
Innosilicon PVT Sensor IP offers reliable implementation for on-chip temperature or voltage measurement applications.

Key Features

Area: 0.088mm2 (200um x 440um) including IO and ESD
Up to 100KS/s sampling rate
Process corner detection for TT/FF/SS on RVT devices
Support temperature and voltage measurement
Temperature range: -40 to 125°C
Temperature resolution: 0.6°C
Temperature accuracy: max +/-3°C
Voltage range: 0.3 to 1.0V
Voltage resolution: 1.2mV
Voltage accuracy: max +/-10mV
Built-in 10-bit SARADC
Built-in bandgap reference
Support BIST logic

Benefits

Low power consumption
Fully customizable
Small area
Simple integration process
Chip level integration

Deliverables

Databook
Encrypted Verilog Model
Timing Library Model (LIB)
Library Exchange Format (LEF)
GDSII Database
Evaluation Board if Available

Technical Specifications

Foundry, Node

SMIC 55/40/28/14nm, TSMC 40/28/22/16/12/7/6/5/4/3nm, Samsung 28/14/10/8nm, GF 55/28/22/14/12nm, HLMC 40/28nm, UMC 40/28nm

Maturity

Silicon Proven

GLOBALFOUNDRIES

In Production: 12nm , 14nm LPP , 22nm FDX , 28nm SLP , 55nm LPX

SMIC

In Production: 14nm , 28nm HKC+ , 40nm LL , 55nm LL

Samsung

In Production: 14nm
Pre-Silicon: 8nm , 10nm , 28nm FDS , 28nm LPP

TSMC

In Production: 12nm , 16nm , 28nm HPC , 28nm HPCP , 28nm HPM , 40nm G , 40nm LP
Pre-Silicon: 4nm
Silicon Proven: 3nm , 5nm , 6nm , 7nm

UMC

In Production: 28nm HPC , 40nm LP

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