Low Power Multi-Rate SerDes
Overview
Includes all high-speed analog functions for serializer and deserializer PMA. Optimized for low power operation at target data rates. Alternative 10b and 40b input and output datapaths simplify design of link layers created from RTL using regular standard cells and regular synthesis, place and route flows. Excellent supply noise immunity in the CDR and TX PLLs makes the SerDes ideal for use in noisy mixed signal SoC environments.
Key Features
- IP available with...
- Data rates of <200Mb/s to >8Gb/s
- Compatible with SGMII, FibreChannel, JESD 204, V-by-One
- Separate PLLs for Tx and Rx support a single reference clock or separate references from 20MHz to 400MHz
- Separate Serializer and Deserializer macros simplify assembly of arbitrary single- or multi-lane configurations
- 10bit and 40bit datapaths for easy SP&R of link layer
- Flexible driver and receiver circuits compatible with LVDS and CML standards with programmable low power settings
- IO library integrated to simplify integration and lower ESD risk
- Trimmable on-die termination ensures excellent signal integrity
- High-speed loop-back path simplifies production testing
- Comprehensive power-down control
Block Diagram
Deliverables
- GDSII
- CDL Netlist (MG Calibre Compatible)
- Functional Verilog Model
- Liberty timing models (.lib)
- LEF
- Application Note with integration and production test guidelines
Technical Specifications
Foundry, Node
TSMC 65nm - 180nm; Global Foundries 28nm - 65nm; SMIC 65nm; Renesas 90nm
Maturity
Silicon Proven
Availability
Available Now
GLOBALFOUNDRIES
In Production:
65nm
LPe
Silicon Proven: 28nm SLP
Silicon Proven: 28nm SLP
Renesas
In Production:
90nm
SMIC
Pre-Silicon:
40nm
LL
,
65nm
LL
,
90nm
LL
Silicon Proven: 55nm LL
Silicon Proven: 55nm LL
TSMC
In Production:
65nm
LP
Pre-Silicon: 40nm LP , 90nm G
Silicon Proven: 180nm G
Pre-Silicon: 40nm LP , 90nm G
Silicon Proven: 180nm G
UMC
Pre-Silicon:
65nm
SP
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