Memory Interface IP for Samsung

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Compare 52 Memory Interface IP for Samsung from 5 vendors (1 - 10)
  • LPDDR5T / LPDDR5X / LPDDR5 Controller
    • Support for all LPDDR5T/5X/5 devices
    • Bank management logic monitors status of each bank
    • Queue-based user interface with reordering scheduler
    • Look-ahead activate, precharge, and auto-precharge logic
    • Parity protection for all stored control registers
    • PHY interface based on DFI 5.1 standard
    Block Diagram -- LPDDR5T / LPDDR5X / LPDDR5 Controller
  • LPDDR5X/5/4X/4 combo PHY at Samsung SF5A
    • Compliant for JEDEC standards for LPDDR5X/5/4X/4 with PHY standards
    • DFI 5.1 specification PHY Interface Compliant
    • Support up to 4 ranks
    • x16 and x32 channel support
    Block Diagram -- LPDDR5X/5/4X/4 combo PHY at Samsung SF5A
  • LPDDR5/4x/4 PHY IP for Samsung 14LPU
    • Compliant with PHY standards
    • Flexible Configuration
    • Maximum data rates
    Block Diagram -- LPDDR5/4x/4 PHY IP for Samsung 14LPU
  • HBM3 PHY
    • Advanced clocking architecture minimizes clock jitter
    • DFI PHY Independent Mode for initialization and training
    • IEEE 1500 interface, Memory BIST feature, and loop-back function
    • Supports lane repair
    • Designed for optimized interposer routing
    Block Diagram -- HBM3 PHY
  • HBM2E/HBM2 Controller
    • High-performance command queue placement and command execution selection
    • Optimized throughput of unique pseudo-channel interleaving
    • Lowest latency for data-intensive applications
    • Low-power control and advanced low-power modes with power-down and self-refresh
    • Memory controller interface is based on DFI 5.0
    • DFI frequency ratio of 2:1
    • Memory BIST feature
    Block Diagram -- HBM2E/HBM2 Controller
  • HBM2E/HBM2 PHY
    • Advanced clocking architecture minimizes clock jitter
    • DFI PHY Independent Mode for initialization and training
    • IEEE 1500 interface, Memory BIST feature, and loop-back function
    • Designed for optimized interposer routing
    • Pin programmable support for lane repair
    Block Diagram -- HBM2E/HBM2 PHY
  • DDR5/4 PHY for Samsung
    • Lowest latency for data-intensive applications
    • Highest data rates with detailed system guidelines
    Block Diagram -- DDR5/4 PHY for Samsung
  • DDR4 multiPHY SP - SS 14LPP
    • Support for JEDEC standard DDR4, DDR3, LPDDR2, and LPDDR3 SDRAMs
    • Scalable architecture that supports data rates up to DDR4-2667
    • Support for DIMMs
    • Delivery of product as a hardened mixed-signal macrocell component allows precise control of timing critical delay and skew paths
    Block Diagram -- DDR4 multiPHY SP - SS 14LPP
  • LPDDR4 multiPHY V2 - SS 8LPU
    • Supports JEDEC standard LPDDR4X, LPDDR4, LPDDR3, DDR4, DDR3, and DDR3L (1.35V DDR3) SDRAMs
    • Support for data rates up to 4,267 Mbps (process dependent)
    • Designed for rapid integration with Synopsys Enhanced Universal DDR Memory/Protocol Controllers (uMCTL2/uPCTL2) for a complete DDR interface solution
    • PHY independent, firmware-based training using an embedded calibration processor
    Block Diagram -- LPDDR4 multiPHY V2 - SS 8LPU
  • LPDDR4 multiPHY V2 - SS 8LPP for Automotive AEC-Q100 Grade 1
    • Supports JEDEC standard LPDDR4X, LPDDR4, LPDDR3, DDR4, DDR3, and DDR3L (1.35V DDR3) SDRAMs
    • Support for data rates up to 4,267 Mbps (process dependent)
    • Designed for rapid integration with Synopsys Enhanced Universal DDR Memory/Protocol Controllers (uMCTL2/uPCTL2) for a complete DDR interface solution
    • PHY independent, firmware-based training using an embedded calibration processor
    Block Diagram -- LPDDR4 multiPHY V2 - SS 8LPP for Automotive AEC-Q100 Grade 1
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