2GBps Low Power D2D Interface

Overview

Custom die-to-die high-speed interface in 28nm process technology. The I/O cells are defined as TX only, and RX only, and have two modes of operation, standard full rail to swing, or a custom low noise pseudo-differential interface. RX cells have a weak pull-down feature.

Key Features

  • Core Device: 0.9V
  • I/O Device: 1.8V Standard
  • Core: Uses SVT only
  • BEOL: Cells currently are M8 and below
  • PAD: Flipchip / die-to-die packaging only, no wire-bond option
  • Cell Dimension: 50um x 24um
  • VDD Core: 0.9V±10%
  • Temperature: -40C to 125C
  • Operational Bit Rate: 2GBps (MAX is 3.5GBps over corners)
  • ESD: ESD testing of the I/Os will never occur directly, but we need sufficient to mitigate die-to-die CDM stresses and assembly issues.

Deliverables

  • Verilog Models for all I/O, behavioral, and stubs.
  • LEF's
  • CDL netlists for DRC and LVS
  • GDS
  • IBIS
  • Liberty TIming Models
  • User Guide and Documentation

Technical Specifications

Foundry, Node
28nm
Maturity
Silicon-Proven
Availability
Immediate
×
Semiconductor IP