The Innosilicon SGMII PHY is a highly programmable module that processes high-speed serial data to parallel data compatible with the IEEE802.3 1000BASEX specification.
This document describes the operation and performance of the PHY and describes how to program the PHY to support different standards and testing modes using Innosilicon’s PHY Programming Utility. The PHY module includes a top-level wrapper integrating both the Physical Media Attachment (PMA) layer, and the Physical Coding Sub-Block (PCS) layer.
SGMII PHY
Overview
Key Features
- General:
- Data Rate 1.25 Gbps
- Package Options Flip-chip, wire-bond
- Interface:
- Reference Clocks 25MHz, within 100ppm
- Reference Clock Select External or through on-chip interface
- External Power Supplies 1.8V and 0.8V
- Internal Power Supplies 0.8V from core
- PMA-TX:
- Output Driver Voltage 150 ~ 400 mVdiffp-p
- Pre-emphasis 1 tap post-cursor, programmable
- Spread Spectrum Programmable spread spectrum generation
- OOB / Beaconing Output enable control for OOB / Beaconing signal generation
- PMA-RX:
- Receive Input Range 150 ~ 400 mVdiffp-p
- Spread Spectrum Supports spread spectrum signaling by clock generation or spread reference clock
- PCS:
- 8b/10b Encoding/Decoding
- Symbol Alignment
- Polarity Inversion
- Bit Stream Reordering
- Energy Efficient Ethernet support
- ESD:
- HBM 2000V, [JEDEC JS-001-2014]
- CDM 250V, [JEDEC JESD22-C101F]
- Testability:
- Multiple Loopback Modes
- Built-in Self Test (BIST)
- Transmit Pattern Generator PRBS or user-defined pattern (supports 8b/10b/16b/20b/32b)
- Stressed Transmit Pattern Generator Enables stressed loopback testing
Deliverables
- Databook and detailed physical implementation guides
- Complete set of timing models
- Library Exchange Format (LEF)
- Encrypted Verilog Models
- Layout vs. Schematic (LVS) report
- GDSII database
Technical Specifications
Foundry, Node
Samsung 28/14/10/8nm, GF 55/28/22/14/12nm, SMIC 55/40/28/14nm, TSMC 55/40/28/22/16/12nm, HLMC 40/28nm, UMC 55/40/28/22nm
GLOBALFOUNDRIES
In Production:
12nm
,
14nm
LPP
,
22nm
FDX
,
28nm
SLP
,
55nm
LPX
Silicon Proven: 12nm , 14nm LPP , 22nm FDX , 28nm SLP , 55nm LPX
Silicon Proven: 12nm , 14nm LPP , 22nm FDX , 28nm SLP , 55nm LPX
SMIC
In Production:
14nm
,
28nm
HKC+
,
40nm
LL
,
55nm
LL
Silicon Proven: 14nm , 28nm HKC+ , 40nm LL , 55nm LL
Silicon Proven: 14nm , 28nm HKC+ , 40nm LL , 55nm LL
Samsung
In Production:
8nm
,
10nm
,
14nm
,
28nm
LPP
Silicon Proven: 8nm , 10nm , 14nm , 28nm LPP
Silicon Proven: 8nm , 10nm , 14nm , 28nm LPP
TSMC
In Production:
12nm
,
16nm
,
22nm
,
28nm
HPC
,
28nm
HPCP
,
28nm
HPM
,
40nm
G
,
40nm
LP
,
55nm
LP
Silicon Proven: 12nm , 16nm , 22nm , 28nm HPC , 28nm HPCP , 28nm HPM , 40nm G , 40nm LP , 55nm LP
Silicon Proven: 12nm , 16nm , 22nm , 28nm HPC , 28nm HPCP , 28nm HPM , 40nm G , 40nm LP , 55nm LP
UMC
In Production:
22nm
,
28nm
HPC
,
40nm
LP
,
55nm
Silicon Proven: 22nm , 28nm HPC , 40nm LP , 55nm
Silicon Proven: 22nm , 28nm HPC , 40nm LP , 55nm