ReRAM NVM in SkyWater 130nm CMOS

Overview

Key Features

• Technology: 130nm, SkyWater S130
• Mask Adder: 2
• Supply Voltage: 1.8V Read, 1.8V+3.3/3.6V Program
• Read Access Time: <20nsec
• Operation Temp.: -40°C - 125°C (can be extended to -55°C)
• Capacity: 256 Kbit (can be customized for 128Kbit - 2Mbit)
• Data Bus Width (Read): 32-bit (can be customized to 16-bit to 128-bit)
• System Interface: APB (can be customized AHB / AXI / OBI / QSPI)
• Endurance (Write cycles): 10K
• Data Retention: ≥10 years @125°C

Benefits

• High write endurance, supporting applications with frequent memory updates
• Excellent data retention, including at high temperatures
• Ultra-low power consumption, including standby power
• Fast access time for quick bootup
• Fast programming, byteaddressable
• Tolerant to ionizing radiation and electromagnetic interference
• Inherently secure technology, deeply embedded between two metal layers

Block Diagram

Applications

• Analog, power management, mixed-signal designs
• IoT, industrial, automotive
• Radiation tolerant designs
• Heterogenous computing
• Data logging applications

Deliverables

• The ReRAM IP is delivered as an embedded module with a complete set of collateral and EDA views to enable smooth integration by SoC architects using state-of-the-art EDA tools. Upon request, the module is available as part of a complete subsystem including a RISC-V microcontroller (MCU), system interfaces, Static Random-Access Memory (SRAM), and peripherals.
• The ReRAM technology is highly scalable and customizable by storage capacity, foundry, and process node. In addition to being available in SkyWater’s 130nm CMOS process, the technology is fully qualified in 130nm in CEA-Leti’s state-of-the-art fab. It has also been proven in 28nm and taped-out in an advanced 22nm FD-SOI process.

Technical Specifications