MIPI M-PHY TX/RX + Controller

Overview

INNOSILICON M-PHY implements MIPI M-PHY protocol V4.1. The M-PHY protocol specification is a part of group of communication protocols defined by MIPI Alliance standards intended for mobile system chip to chip communications. The M-PHY specification is specifically targeted to be suitable for multiple protocols, and for a wide range of applications.
INNOSILICON M-PHY includes transmitters and receivers to implement full-duplex operations. The IP supports multiple BURST modes, including HS, LS for improved power efficiency, and multiple power saving modes where power consumption can be traded-off against recovery time. The INNOSILICON I/O and ESD are also built- in, providing a convenient, drop- in PHY. The design is optimized for high speed applications with robust timing and small silicon area.
The INNOSILICON M-PHY supports the electrical portion of MIPI M -PHY V4.1 standard and cost-effectively adds MIPI M-PHY V4.1 capability to any SOC.

Key Features

  • Compliant with MIPI Alliance Standard for MIPI M-PHY V4.1 Specifications
  • Supports standard RMMI interface compliant to M-PHY Specifications
  • Supports HS Mode (GEAR1~4, A/B)
  • Supports data rate up to 11.6608Gbps per lane
  • Supports M-PHY Type-I (PWM-G1~7)
  • Supports M-PHY Type-II
  • Supports reference clocks frequency: 19.2/26/38.4/52 MHz
  • Supports LS-BURST, HS-BURST, STALL, SLEEP, HIBERN8 states
  • Dynamic configuration and control via core ports
  • Supports 10/20/40-bit width symbol bus
  • Supports PRBS9/CUSTOM/CRPAT/CJTPAT pattern in test mode
  • Supports Near-end BIST and Far-end loopback
  • Supports CSI-3SM, LLI, and SSIC IP
  • Support slew-rate control for reducing EMI

Deliverables

  • Databook and physical implementation guides Netlist (Spice format for LVS)
  • Library Exchange Format (LEF)
  • Verilog Models
  • GDSII to Foundry IP Merge
  • Module integration guidelines
  • Silicon validation report (when available)
  • Evaluation board (when available)

Technical Specifications

Foundry, Node
Samsung 14/5nm, TSMC 55/40/28/22/16/12/6nm, GF 55/28/22/14/12nm, SMIC 55/40/28/14nm, UMC 55/40/28/22nm, HLMC 40/28nm
GLOBALFOUNDRIES
In Production: 12nm , 14nm LPP , 22nm FDX , 28nm SLP , 55nm LPX
Silicon Proven: 12nm , 14nm LPP , 22nm FDX , 28nm SLP , 55nm LPX
SMIC
In Production: 14nm , 28nm HKC+ , 40nm LL , 55nm LL
Silicon Proven: 14nm , 28nm HKC+ , 40nm LL , 55nm LL
Samsung
In Production: 5nm , 14nm
Silicon Proven: 5nm , 14nm
TSMC
In Production: 6nm , 12nm , 16nm , 22nm , 28nm HPC , 28nm HPCP , 28nm HPM , 40nm G , 40nm LP , 55nm LP
Silicon Proven: 6nm , 12nm , 16nm , 22nm , 28nm HPC , 28nm HPCP , 28nm HPM , 40nm G , 40nm LP , 55nm LP
UMC
In Production: 22nm , 28nm HPC , 40nm LP , 55nm
Silicon Proven: 22nm , 28nm HPC , 40nm LP , 55nm
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Semiconductor IP