4MHz Internal Oscillator - Ultra Low Power (1µA@4MHz@1V) LFoundry (SMIC) 0.15 um
Overview
This macro-cell is a general purpose, ultra low power internal oscillator core designed for LFoundry 0.15µm LF150 CMOS technology STD (Standard) and LP (Low Power) process. The circuit has internal level shifting and start-up circuits. A 4-bit digital bus allows frequency calibration against process variations. It also includes an internal current bias. The core is easily retargeted to any other CMOS technology due to its MOSFET-only oscillator architecture.
Key Features
- 4MHz internal oscillator
- Low consumption (< 1µA)
- Flexible supply voltage: 1.03.6V
- Frequency calibrated (typ. ±2.5%)
- Internal level shifter and current bias
- Indicative area: 0.012mm2
Applications
- Battery powered equipment
- Passive/active RFID tag ICs
- Energy Harvesting ICs
- Hearing aids
Deliverables
- Datasheet/Integration Guide
- HDL Model
- Flat GDSII database/LVS netlist
- Customer Support
Technical Specifications
Foundry, Node
LFoundry 0.15 um
Maturity
Silicon Proven
LFoundry
Silicon Proven:
150nm
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