4MHz Internal Oscillator - Ultra Low Power (1µA@4MHz@1V) LFoundry (SMIC) 0.15 um

Overview

This macro-cell is a general purpose, ultra low power internal oscillator core designed for LFoundry 0.15µm LF150 CMOS technology STD (Standard) and LP (Low Power) process. The circuit has internal level shifting and start-up circuits. A 4-bit digital bus allows frequency calibration against process variations. It also includes an internal current bias. The core is easily retargeted to any other CMOS technology due to its MOSFET-only oscillator architecture.

Key Features

  • 4MHz internal oscillator
  • Low consumption (< 1µA)
  • Flexible supply voltage: 1.0­3.6V
  • Frequency calibrated (typ. ±2.5%)
  • Internal level shifter and current bias
  • Indicative area: 0.012mm2

Applications

  • Battery powered equipment
  • Passive/active RFID tag ICs
  • Energy Harvesting ICs
  • Hearing aids

Deliverables

  • Datasheet/Integration Guide
  • HDL Model
  • Flat GDSII database/LVS netlist
  • Customer Support

Technical Specifications

Foundry, Node
LFoundry 0.15 um
Maturity
Silicon Proven
LFoundry
Silicon Proven: 150nm
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Semiconductor IP