130kHz Internal Oscillator - Low voltage (1V), Low Power (160nW@130kHz) LFoundry (SMIC) 0.15 um
Overview
This macro-cell is a general purpose, ultra low power internal oscillator core designed for LFoundry 0.15µm LF150 CMOS technology STD (Standard) and LP (Low Power) process. The circuit has internal level shifting and a start-up circuit. A 4-bit digital bus allows frequency calibration against process variations. A digital output signal indicating that the oscillator is operating properly is also available. It also includes an internal current bias. The core is easily retargeted to any other CMOS technology due to its MOSFET-only oscillator architecture.
Key Features
- 130kHz internal oscillator
- Low consumption (2nA/kHz)
- Flexible supply voltage: 1.03.6V
- Frequency calibrated (typ. ±5%)
- Internal level shifter and current bias
- Power down mode
- Indicative area: 0.02mm2
Applications
- Battery powered equipment
- Passive/active RFID tag ICs
- Energy Harvesting ICs
- Hearing aids
Deliverables
- Datasheet/Integration Guide
- HDL Model
- Flat GDSII database/LVS netlist
- Customer Support
Technical Specifications
Foundry, Node
LFoundry 0.15 um
Maturity
Silicon Proven
LFoundry
Silicon Proven:
150nm
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