130kHz Internal Oscillator - Low voltage (1V), Low Power (160nW@130kHz) LFoundry (SMIC) 0.15 um

Overview

This macro-cell is a general purpose, ultra low power internal oscillator core designed for LFoundry 0.15µm LF150 CMOS technology STD (Standard) and LP (Low Power) process. The circuit has internal level shifting and a start-up circuit. A 4-bit digital bus allows frequency calibration against process variations. A digital output signal indicating that the oscillator is operating properly is also available. It also includes an internal current bias. The core is easily retargeted to any other CMOS technology due to its MOSFET-only oscillator architecture.

Key Features

  • 130kHz internal oscillator
  • Low consumption (2nA/kHz)
  • Flexible supply voltage: 1.0­3.6V
  • Frequency calibrated (typ. ±5%)
  • Internal level shifter and current bias
  • Power down mode
  • Indicative area: 0.02mm2

Applications

  • Battery powered equipment
  • Passive/active RFID tag ICs
  • Energy Harvesting ICs
  • Hearing aids

Deliverables

  • Datasheet/Integration Guide
  • HDL Model
  • Flat GDSII database/LVS netlist
  • Customer Support

Technical Specifications

Foundry, Node
LFoundry 0.15 um
Maturity
Silicon Proven
LFoundry
Silicon Proven: 150nm
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Semiconductor IP