500nm Trimmed Low Power Bandgap

Overview

The BG102 is a 1.2V CMOS low power, medium precision CMOS bandgap cell designed for use in a wide variety of mixed signal device applications.

The base design is implemented with lambda-based sizing and portable
layout constructs for maximum ease of process porting. The architecture
supports operation down to 1.5V.

Key Features

Precision of ±0.5% over process, temperature, and voltage.
4 Bit temperature coefficient trimming.
Optional 4 bit voltage trimmer.
1.2V output.
DC PSRR -100dB, Peak PSRR –20dB.
15µV RMS output noise
3.3 or 5 Volt supply voltage options with option for separate substrate connections.
Power down input.
Uses manufacturer supported bipolar structures.
500nA positive temperature coefficient current source.
Bullet-proof start-up circuit.
Stable to infinite capacitive load.
Start-up time less than 5µS.
Base cell area 0.03mm² in 0.35µ CMOS.
1P3M CMOS process compatibility.

Block Diagram

Applications

Temperature reference.
LDO.
Bias generation.

Deliverables

Metal layout outline.
Flat GDS layout (for some IP this is delivered to the fab for integration).
Verilog model.
SPICE flat netlist.
Basic SPICE testbench. Allows for verification of basic function.
Integration notes, and integration consulting support.
Test implementation notes.
Service Features
- 5 Weeks lead time for process ports.
- Available support for manufacturing and characterization.

Technical Specifications

Request Info